Epitaxially grown GaAsN random laser
نویسندگان
چکیده
We have studied the photoluminescence properties of as-grown GaAs12xNx epitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d .200 nm! GaAs0.972N0.028 layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We believe that high gain in combination with structural inhomogeneities that are evident in these GaAs0.972N0.028 layers, can explain the random lasing in such epitaxial layers. © 2003 American Institute of Physics. @DOI: 10.1063/1.1568533#
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تاریخ انتشار 2003